Обзор продукта
- Номер продукта
- CDP1821CD3R1783
- ПРОИЗВОДИТЕЛЬ
- Rochester Electronics
- Каталог
- Memory
- ОПИСАНИЕ продукта
- HIGH-RELIABILITY CMOS 1024-WORD
Документы и СМИ
- Диаши
- CDP1821CD3R1783
информация о продукте
- Access Time :
- 255 ns
- Clock Frequency :
- -
- Memory Format :
- SRAM
- Memory Interface :
- Parallel
- Memory Size :
- 1Kb (1K x 1)
- Memory Type :
- Volatile
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 125°C (TA)
- Part Status :
- Active
- Supplier Device Package :
- 16-SBDIP
- Technology :
- SRAM - Asynchronous
- Voltage - Supply :
- 4V ~ 6.5V
- Write Cycle Time - Word, Page :
- 420ns
ОПИСАНИЕ продукта
HIGH-RELIABILITY CMOS 1024-WORD
