Диаши

SBE808-TL-W

Current - Average Rectified (Io) (per Diode) :

1A

Current - Reverse Leakage @ Vr :

3 µA @ 6 V

Diode Configuration :

2 Independent

Diode Type :

Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-55°C ~ 150°C

Package / Case :

6-SMD (5 Leads), Flat Lead

Part Status :

Obsolete

Reverse Recovery Time (trr) :

10 ns

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

5-MCPH

Voltage - DC Reverse (Vr) (Max) :

15 V

Voltage - Forward (Vf) (Max) @ If :

540 mV @ 1 A