Диаши

GB2X50MPS12-227

Current - Average Rectified (Io) (per Diode) :

93A (DC)

Current - Reverse Leakage @ Vr :

40 µA @ 1200 V

Diode Configuration :

2 Independent

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Chassis Mount

Operating Temperature - Junction :

-55°C ~ 175°C

Package / Case :

SOT-227-4, miniBLOC

Part Status :

Active

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

SOT-227

Voltage - DC Reverse (Vr) (Max) :

1200 V

Voltage - Forward (Vf) (Max) @ If :

1.8 V @ 50 A