Обзор продукта
- Номер продукта
- MURTA600120
- ПРОИЗВОДИТЕЛЬ
- GeneSiC Semiconductor
- Каталог
- Diodes - Rectifiers - Arrays
- ОПИСАНИЕ продукта
- DIODE GEN 1.2KV 300A 3 TOWER
Документы и СМИ
- Диаши
- MURTA600120
информация о продукте
- Current - Average Rectified (Io) (per Diode) :
- 300A
- Current - Reverse Leakage @ Vr :
- 25 µA @ 1200 V
- Diode Configuration :
- 1 Pair Common Cathode
- Diode Type :
- Standard
- Mounting Type :
- Chassis Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- Three Tower
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- Three Tower
- Voltage - DC Reverse (Vr) (Max) :
- 1200 V
- Voltage - Forward (Vf) (Max) @ If :
- 2.6 V @ 300 A
ОПИСАНИЕ продукта
DIODE GEN 1.2KV 300A 3 TOWER