Диаши

IDW40G65C5B

Current - Average Rectified (Io) (per Diode) :

20A (DC)

Current - Reverse Leakage @ Vr :

210 µA @ 650 V

Diode Configuration :

1 Independent

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Through Hole

Operating Temperature - Junction :

-55°C ~ 175°C

Package / Case :

TO-247-3

Part Status :

Active

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

PG-TO247-3-41

Voltage - DC Reverse (Vr) (Max) :

650 V

Voltage - Forward (Vf) (Max) @ If :

1.7 V @ 20 A