Диаши

C4D08120E

Capacitance @ Vr, F :

560pF @ 0V, 1MHz

Current - Average Rectified (Io) :

24.5A (DC)

Current - Reverse Leakage @ Vr :

250 µA @ 1200 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-55°C ~ 175°C

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Part Status :

Active

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

TO-252-2

Voltage - DC Reverse (Vr) (Max) :

1200 V

Voltage - Forward (Vf) (Max) @ If :

3 V @ 2 A