Диаши

BAS40L-HG3-08

Capacitance @ Vr, F :

2.9pF @ 0V, 1MHz

Current - Average Rectified (Io) :

200mA (DC)

Current - Reverse Leakage @ Vr :

10 µA @ 40 V

Diode Type :

Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

150°C

Package / Case :

0402 (1006 Metric)

Part Status :

Active

Reverse Recovery Time (trr) :

-

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

DFN1006-2A

Voltage - DC Reverse (Vr) (Max) :

40 V

Voltage - Forward (Vf) (Max) @ If :

1 V @ 40 mA