Диаши

SJPB-H4VR

Capacitance @ Vr, F :

-

Current - Average Rectified (Io) :

2A

Current - Reverse Leakage @ Vr :

200 µA @ 40 V

Diode Type :

Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-40°C ~ 150°C

Package / Case :

2-SMD, J-Lead

Part Status :

Active

Reverse Recovery Time (trr) :

-

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

SJP

Voltage - DC Reverse (Vr) (Max) :

40 V

Voltage - Forward (Vf) (Max) @ If :

550 mV @ 2 A