Диаши

E4D20120D

Capacitance @ Vr, F :

712pF @ 0V, 1MHz

Current - Average Rectified (Io) :

33A (DC)

Current - Reverse Leakage @ Vr :

200 µA @ 200 µA

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Through Hole

Operating Temperature - Junction :

-55°C ~ 175°C

Package / Case :

TO-247-3

Part Status :

Active

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

TO-247-3

Voltage - DC Reverse (Vr) (Max) :

1200 V

Voltage - Forward (Vf) (Max) @ If :

1.8 V @ 10 A