Обзор продукта
- Номер продукта
- TRS3E65F,S1Q
- ПРОИЗВОДИТЕЛЬ
- Toshiba Electronic Devices and Storage Corporation
- Каталог
- Diodes - Rectifiers - Single
- ОПИСАНИЕ продукта
- PB-F DIODE TO-220-2L V=650 IF=3A
Документы и СМИ
- Диаши
- TRS3E65F,S1Q
информация о продукте
- Capacitance @ Vr, F :
- 12pF @ 650V, 1MHz
- Current - Average Rectified (Io) :
- 3A (DC)
- Current - Reverse Leakage @ Vr :
- 20 µA @ 650 V
- Diode Type :
- Silicon Carbide Schottky
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- 175°C (Max)
- Package / Case :
- TO-220-2
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 0 ns
- Speed :
- No Recovery Time > 500mA (Io)
- Supplier Device Package :
- TO-220-2L
- Voltage - DC Reverse (Vr) (Max) :
- 650 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.6 V @ 3 A
ОПИСАНИЕ продукта
PB-F DIODE TO-220-2L V=650 IF=3A
