Диаши

VS-C04ET07T-M3

Capacitance @ Vr, F :

170pF @ 1V, 1MHz

Current - Average Rectified (Io) :

4A (DC)

Current - Reverse Leakage @ Vr :

25 µA @ 650 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Through Hole

Operating Temperature - Junction :

-55°C ~ 175°C

Package / Case :

TO-220-2

Part Status :

Active

Reverse Recovery Time (trr) :

-

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

TO-220AC

Voltage - DC Reverse (Vr) (Max) :

650 V

Voltage - Forward (Vf) (Max) @ If :

1.7 V @ 4 A