Диаши

IDK08G120C5XTMA1

Capacitance @ Vr, F :

365pF @ 1V, 1MHz

Current - Average Rectified (Io) :

22.8A (DC)

Current - Reverse Leakage @ Vr :

40 µA @ 1200 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-55°C ~ 175°C

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Part Status :

Active

Reverse Recovery Time (trr) :

-

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

PG-TO263-2-1

Voltage - DC Reverse (Vr) (Max) :

1200 V

Voltage - Forward (Vf) (Max) @ If :

1.95 V @ 8 V