Обзор продукта
- Номер продукта
- WNSC06650T6J
- ПРОИЗВОДИТЕЛЬ
- WeEn Semiconductors Co., Ltd
- Каталог
- Diodes - Rectifiers - Single
- ОПИСАНИЕ продукта
- SILICON CARBIDE POWER DIODE
Документы и СМИ
- Диаши
- WNSC06650T6J
информация о продукте
- Capacitance @ Vr, F :
- 190pF @ 1V, 1MHz
- Current - Average Rectified (Io) :
- 6A
- Current - Reverse Leakage @ Vr :
- 40 µA @ 650 V
- Diode Type :
- Silicon Carbide Schottky
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- 175°C (Max)
- Package / Case :
- 4-VDFN Exposed Pad
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 0 ns
- Speed :
- No Recovery Time > 500mA (Io)
- Supplier Device Package :
- 5-DFN (8x8)
- Voltage - DC Reverse (Vr) (Max) :
- 650 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.7 V @ 6 A
ОПИСАНИЕ продукта
SILICON CARBIDE POWER DIODE
