Диаши

STPSC8H065G-TR

Capacitance @ Vr, F :

414pF @ 0V, 1MHz

Current - Average Rectified (Io) :

8A

Current - Reverse Leakage @ Vr :

80 µA @ 650 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-40°C ~ 175°C

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Part Status :

Active

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

D²PAK

Voltage - DC Reverse (Vr) (Max) :

650 V

Voltage - Forward (Vf) (Max) @ If :

1.75 V @ 8 A