Диаши

FFSB20120A-F085

Capacitance @ Vr, F :

1220pF @ 1V, 100KHz

Current - Average Rectified (Io) :

32A (DC)

Current - Reverse Leakage @ Vr :

200 µA @ 1200 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-55°C ~ 175°C

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Part Status :

Active

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

D²PAK (TO-263)

Voltage - DC Reverse (Vr) (Max) :

1200 V

Voltage - Forward (Vf) (Max) @ If :

1.75 V @ 20 A