Диаши

IDDD04G65C6XTMA1

Capacitance @ Vr, F :

205pF @ 1V, 1MHz

Current - Average Rectified (Io) :

13A (DC)

Current - Reverse Leakage @ Vr :

14 µA @ 420 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-55°C ~ 175°C

Package / Case :

10-PowerSOP Module

Part Status :

Active

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

PG-HDSOP-10-1

Voltage - DC Reverse (Vr) (Max) :

650 V

Voltage - Forward (Vf) (Max) @ If :

-