Диаши

FESB16DT-E3/45

Capacitance @ Vr, F :

175pF @ 4V, 1MHz

Current - Average Rectified (Io) :

16A

Current - Reverse Leakage @ Vr :

10 µA @ 200 V

Diode Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-65°C ~ 150°C

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Part Status :

Active

Reverse Recovery Time (trr) :

35 ns

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

TO-263AB (D²PAK)

Voltage - DC Reverse (Vr) (Max) :

200 V

Voltage - Forward (Vf) (Max) @ If :

975 mV @ 16 A