Диаши

1C5819.T

Capacitance @ Vr, F :

110pF @ 5V, 1MHz

Current - Average Rectified (Io) :

1A

Current - Reverse Leakage @ Vr :

50 µA @ 20 V

Diode Type :

Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-55°C ~ 125°C

Package / Case :

Die

Part Status :

Active

Reverse Recovery Time (trr) :

-

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

Die

Voltage - DC Reverse (Vr) (Max) :

20 V

Voltage - Forward (Vf) (Max) @ If :

450 mV @ 1 A