Диаши

MURSD860A-TP

Capacitance @ Vr, F :

35pF @ 4V, 1MHz

Current - Average Rectified (Io) :

8A

Current - Reverse Leakage @ Vr :

5 µA @ 600 V

Diode Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-55°C ~ 150°C

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Part Status :

Active

Reverse Recovery Time (trr) :

35 ns

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

D-Pak

Voltage - DC Reverse (Vr) (Max) :

600 V

Voltage - Forward (Vf) (Max) @ If :

1.6 V @ 8 A