Диаши

BAS16L-HG3-08

Capacitance @ Vr, F :

0.36pF @ 0V, 1MHz

Current - Average Rectified (Io) :

250mA (DC)

Current - Reverse Leakage @ Vr :

1 µA @ 100 V

Diode Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-55°C ~ 150°C

Package / Case :

0402 (1006 Metric)

Part Status :

Active

Reverse Recovery Time (trr) :

4 ns

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

DFN1006-2A

Voltage - DC Reverse (Vr) (Max) :

100 V

Voltage - Forward (Vf) (Max) @ If :

1.25 V @ 150 mA