Диаши

PMEG100T080ELPE-QZ

Capacitance @ Vr, F :

680pF @ 1V, 1MHz

Current - Average Rectified (Io) :

8A

Current - Reverse Leakage @ Vr :

4 µA @ 100 V

Diode Type :

Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

175°C

Package / Case :

TO-277, 3-PowerDFN

Part Status :

Active

Reverse Recovery Time (trr) :

19 ns

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

CFP15B

Voltage - DC Reverse (Vr) (Max) :

100 V

Voltage - Forward (Vf) (Max) @ If :

810 mV @ 8 A