Диаши

PCDB10120G1_T0_00001

Capacitance @ Vr, F :

529pF @ 1V, 1MHz

Current - Average Rectified (Io) :

10A (DC)

Current - Reverse Leakage @ Vr :

100 µA @ 1200 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-55°C ~ 175°C

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Part Status :

Active

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

TO-263

Voltage - DC Reverse (Vr) (Max) :

1200 V

Voltage - Forward (Vf) (Max) @ If :

1.7 V @ 10 A