Диаши

WNSC2D08650DJ

Capacitance @ Vr, F :

260pF @ 1V, 1MHz

Current - Average Rectified (Io) :

8A

Current - Reverse Leakage @ Vr :

40 µA @ 650 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

175°C

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Part Status :

Active

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

DPAK

Voltage - DC Reverse (Vr) (Max) :

650 V

Voltage - Forward (Vf) (Max) @ If :

1.7 V @ 8 A