Диаши

MBR8170TFSTWG

Capacitance @ Vr, F :

237pF @ 1V, 1MHz

Current - Average Rectified (Io) :

8A (DC)

Current - Reverse Leakage @ Vr :

30 µA @ 170 V

Diode Type :

Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-55°C ~ 175°C

Package / Case :

8-PowerWDFN

Part Status :

Active

Reverse Recovery Time (trr) :

-

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

8-WDFN (3.3x3.3)

Voltage - DC Reverse (Vr) (Max) :

170 V

Voltage - Forward (Vf) (Max) @ If :

890 mV @ 8 A