Диаши

VB20120SG-E3/4W

Capacitance @ Vr, F :

-

Current - Average Rectified (Io) :

20A

Current - Reverse Leakage @ Vr :

250 µA @ 120 V

Diode Type :

Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-40°C ~ 150°C

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Part Status :

Active

Reverse Recovery Time (trr) :

-

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

TO-263AB (D²PAK)

Voltage - DC Reverse (Vr) (Max) :

120 V

Voltage - Forward (Vf) (Max) @ If :

1.33 V @ 20 A