Диаши

IDK04G65C5XTMA2

Capacitance @ Vr, F :

130pF @ 1V, 1MHz

Current - Average Rectified (Io) :

4A (DC)

Current - Reverse Leakage @ Vr :

670 µA @ 650 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-55°C ~ 175°C

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Part Status :

Active

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

PG-TO263-2

Voltage - DC Reverse (Vr) (Max) :

650 V

Voltage - Forward (Vf) (Max) @ If :

1.8 V @ 4 A