Диаши

E1780TG65E

Capacitance @ Vr, F :

-

Current - Average Rectified (Io) :

1780A

Current - Reverse Leakage @ Vr :

100 mA @ 3600 V

Diode Type :

Standard

Mounting Type :

Chassis Mount

Operating Temperature - Junction :

-40°C ~ 140°C

Package / Case :

TO-200AF

Part Status :

Active

Reverse Recovery Time (trr) :

1.22 µs

Speed :

Standard Recovery >500ns, > 200mA (Io)

Supplier Device Package :

-

Voltage - DC Reverse (Vr) (Max) :

3600 V

Voltage - Forward (Vf) (Max) @ If :

3.83 V @ 1.78 kA