Диаши

JAN1N6912UTK2AS/TR

Capacitance @ Vr, F :

1000pF @ 5V, 1MHz

Current - Average Rectified (Io) :

25A

Current - Reverse Leakage @ Vr :

1.2 mA @ 45 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-65°C ~ 150°C

Package / Case :

ThinKey™2

Part Status :

Active

Reverse Recovery Time (trr) :

-

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

ThinKey™2

Voltage - DC Reverse (Vr) (Max) :

45 V

Voltage - Forward (Vf) (Max) @ If :

640 mV @ 25 A