Диаши

IV1D12010O2

Capacitance @ Vr, F :

575pF @ 1V, 1MHz

Current - Average Rectified (Io) :

28A (DC)

Current - Reverse Leakage @ Vr :

50 µA @ 1200 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Through Hole

Operating Temperature - Junction :

-55°C ~ 175°C (TJ)

Package / Case :

TO-220-2

Part Status :

Active

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

TO-220-2

Voltage - DC Reverse (Vr) (Max) :

1200 V

Voltage - Forward (Vf) (Max) @ If :

1.8 V @ 10 A