Диаши

1N8035-GA

Capacitance @ Vr, F :

1107pF @ 1V, 1MHz

Current - Average Rectified (Io) :

14.6A (DC)

Current - Reverse Leakage @ Vr :

5 µA @ 650 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-55°C ~ 250°C

Package / Case :

TO-276AA

Part Status :

Obsolete

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

TO-276

Voltage - DC Reverse (Vr) (Max) :

650 V

Voltage - Forward (Vf) (Max) @ If :

1.5 V @ 15 A