Диаши

GAP05SLT80-220

Capacitance @ Vr, F :

25pF @ 1V, 1MHz

Current - Average Rectified (Io) :

50mA (DC)

Current - Reverse Leakage @ Vr :

3.8 µA @ 8000 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Through Hole

Operating Temperature - Junction :

-55°C ~ 175°C

Package / Case :

Axial

Part Status :

Obsolete

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

-

Voltage - DC Reverse (Vr) (Max) :

8000 V

Voltage - Forward (Vf) (Max) @ If :

4.6 V @ 50 mA