Диаши

APT10SCD65K

Capacitance @ Vr, F :

300pF @ 1V, 1MHz

Current - Average Rectified (Io) :

17A

Current - Reverse Leakage @ Vr :

200 µA @ 650 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Through Hole

Operating Temperature - Junction :

-55°C ~ 150°C

Package / Case :

TO-220-2

Part Status :

Obsolete

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

TO-220 [K]

Voltage - DC Reverse (Vr) (Max) :

650 V

Voltage - Forward (Vf) (Max) @ If :

1.8 V @ 10 A