Диаши

IDC08S60CEX1SA3

Capacitance @ Vr, F :

310pF @ 1V, 1MHz

Current - Average Rectified (Io) :

8A (DC)

Current - Reverse Leakage @ Vr :

100 µA @ 600 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-55°C ~ 175°C

Package / Case :

Die

Part Status :

Obsolete

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

Die

Voltage - DC Reverse (Vr) (Max) :

600 V

Voltage - Forward (Vf) (Max) @ If :

1.7 V @ 8 A