Диаши

IXDN602SI

Channel Type :

Independent

Current - Peak Output (Source, Sink) :

2A, 2A

Driven Configuration :

Low-Side

Gate Type :

IGBT, N-Channel, P-Channel MOSFET

High Side Voltage - Max (Bootstrap) :

-

Input Type :

Non-Inverting

Logic Voltage - VIL, VIH :

0.8V, 3V

Mounting Type :

Surface Mount

Number of Drivers :

2

Operating Temperature :

-55°C ~ 150°C (TJ)

Part Status :

Active

Rise / Fall Time (Typ) :

7.5ns, 6.5ns

Supplier Device Package :

8-SOIC-EP

Voltage - Supply :

4.5V ~ 35V