Диаши

IRS21962SPBF

Channel Type :

Independent

Current - Peak Output (Source, Sink) :

500mA, 500mA

Driven Configuration :

High-Side

Gate Type :

IGBT, N-Channel MOSFET

High Side Voltage - Max (Bootstrap) :

600 V

Input Type :

Non-Inverting

Logic Voltage - VIL, VIH :

0.6V, 3.5V

Mounting Type :

Surface Mount

Number of Drivers :

2

Operating Temperature :

-55°C ~ 125°C (TJ)

Part Status :

Active

Rise / Fall Time (Typ) :

25ns, 25ns

Supplier Device Package :

16-SOIC

Voltage - Supply :

10V ~ 20V