Диаши

IR2213STRPBF

Channel Type :

Independent

Current - Peak Output (Source, Sink) :

2A, 2.5A

Driven Configuration :

Half-Bridge

Gate Type :

IGBT, N-Channel MOSFET

High Side Voltage - Max (Bootstrap) :

1200 V

Input Type :

Non-Inverting

Logic Voltage - VIL, VIH :

6V, 9.5V

Mounting Type :

Surface Mount

Number of Drivers :

2

Operating Temperature :

125°C (TJ)

Part Status :

Active

Rise / Fall Time (Typ) :

25ns, 17ns

Supplier Device Package :

16-SOIC

Voltage - Supply :

12V ~ 20V