Диаши

IRS2008MTRPBFAUMA1

Channel Type :

Synchronous

Current - Peak Output (Source, Sink) :

290mA, 600mA

Driven Configuration :

Half-Bridge

Gate Type :

IGBT, N-Channel MOSFET

High Side Voltage - Max (Bootstrap) :

200 V

Input Type :

CMOS

Logic Voltage - VIL, VIH :

0.8V, 2.5V

Mounting Type :

Surface Mount

Number of Drivers :

1

Operating Temperature :

-40°C ~ 125°C (TA)

Package / Case :

14-VFQFN Exposed Pad

Part Status :

Obsolete

Rise / Fall Time (Typ) :

70ns, 30ns

Supplier Device Package :

14-MLPQ (4x4)

Voltage - Supply :

10V ~ 20V