Диаши

HIP2101EIBZT

Channel Type :

Independent

Current - Peak Output (Source, Sink) :

2A, 2A

Driven Configuration :

Half-Bridge

Gate Type :

N-Channel MOSFET

High Side Voltage - Max (Bootstrap) :

114 V

Input Type :

Non-Inverting

Logic Voltage - VIL, VIH :

0.8V, 2.2V

Mounting Type :

Surface Mount

Number of Drivers :

2

Operating Temperature :

-55°C ~ 150°C (TJ)

Part Status :

Active

Rise / Fall Time (Typ) :

10ns, 10ns

Supplier Device Package :

8-SOIC-EP

Voltage - Supply :

9V ~ 14V