Диаши

NCP81075DR2G

Channel Type :

Independent

Current - Peak Output (Source, Sink) :

4A, 4A

Driven Configuration :

High-Side or Low-Side

Gate Type :

N-Channel MOSFET

High Side Voltage - Max (Bootstrap) :

200 V

Input Type :

Non-Inverting

Logic Voltage - VIL, VIH :

0.8V, 2.7V

Mounting Type :

Surface Mount

Number of Drivers :

2

Operating Temperature :

-40°C ~ 140°C (TJ)

Part Status :

Active

Rise / Fall Time (Typ) :

8ns, 7ns

Supplier Device Package :

8-SOIC

Voltage - Supply :

8.5V ~ 20V