Диаши

IR2011STRPBF

Channel Type :

Independent

Current - Peak Output (Source, Sink) :

1A, 1A

Driven Configuration :

High-Side or Low-Side

Gate Type :

N-Channel MOSFET

High Side Voltage - Max (Bootstrap) :

200 V

Input Type :

Inverting

Logic Voltage - VIL, VIH :

0.7V, 2.2V

Mounting Type :

Surface Mount

Number of Drivers :

2

Operating Temperature :

-40°C ~ 150°C (TJ)

Part Status :

Active

Rise / Fall Time (Typ) :

35ns, 20ns

Supplier Device Package :

8-SOIC

Voltage - Supply :

10V ~ 20V