Диаши

BM60213FV-CE2

Channel Type :

Independent

Current - Peak Output (Source, Sink) :

4.5A, 3.9A

Driven Configuration :

High-Side or Low-Side

Gate Type :

IGBT, N-Channel MOSFET

High Side Voltage - Max (Bootstrap) :

1200 V

Input Type :

Non-Inverting

Logic Voltage - VIL, VIH :

0.8V, 2V

Mounting Type :

Surface Mount

Number of Drivers :

2

Operating Temperature :

-40°C ~ 125°C

Part Status :

Active

Rise / Fall Time (Typ) :

50ns, 50ns

Supplier Device Package :

20-SSOP-BW

Voltage - Supply :

10V ~ 24V