Диаши

2ED2106S06FXUMA1

Channel Type :

Independent

Current - Peak Output (Source, Sink) :

290mA, 700mA

Driven Configuration :

High-Side and Low-Side

Gate Type :

IGBT, N-Channel MOSFET

High Side Voltage - Max (Bootstrap) :

675 V

Input Type :

CMOS, TTL

Logic Voltage - VIL, VIH :

1.1V, 1.7V

Mounting Type :

Surface Mount

Number of Drivers :

2

Operating Temperature :

-40°C ~ 125°C (TA)

Part Status :

Active

Rise / Fall Time (Typ) :

100ns, 35ns

Supplier Device Package :

PG-DSO-8-69

Voltage - Supply :

10V ~ 20V