Диаши

IRS2108SPBF

Channel Type :

Independent

Current - Peak Output (Source, Sink) :

290mA, 600mA

Driven Configuration :

Half-Bridge

Gate Type :

IGBT, N-Channel MOSFET

High Side Voltage - Max (Bootstrap) :

600 V

Input Type :

Inverting, Non-Inverting

Logic Voltage - VIL, VIH :

0.8V, 2.5V

Mounting Type :

Surface Mount

Number of Drivers :

2

Operating Temperature :

-40°C ~ 150°C (TJ)

Part Status :

Active

Rise / Fall Time (Typ) :

100ns, 35ns

Supplier Device Package :

8-SOIC

Voltage - Supply :

10V ~ 20V