Диаши

2ED2110S06MXUMA1

Channel Type :

Independent

Current - Peak Output (Source, Sink) :

2.5A, 2.5A

Driven Configuration :

High-Side and Low-Side

Gate Type :

IGBT, N-Channel MOSFET

High Side Voltage - Max (Bootstrap) :

650 V

Input Type :

Non-Inverting

Logic Voltage - VIL, VIH :

6V, 14V

Mounting Type :

Surface Mount

Number of Drivers :

2

Operating Temperature :

-40°C ~ 125°C (TA)

Part Status :

Active

Rise / Fall Time (Typ) :

25ns, 17ns

Supplier Device Package :

16-SOIC

Voltage - Supply :

10V ~ 20V