Диаши

IRS2118SPBF

Channel Type :

Single

Current - Peak Output (Source, Sink) :

290mA, 600mA

Driven Configuration :

High-Side

Gate Type :

IGBT, N-Channel MOSFET

High Side Voltage - Max (Bootstrap) :

600 V

Input Type :

Inverting

Logic Voltage - VIL, VIH :

6V, 9.5V

Mounting Type :

Surface Mount

Number of Drivers :

1

Operating Temperature :

-40°C ~ 150°C (TJ)

Part Status :

Active

Rise / Fall Time (Typ) :

75ns, 35ns

Supplier Device Package :

8-SOIC

Voltage - Supply :

10V ~ 20V