Диаши

L6389EDTR

Channel Type :

Independent

Current - Peak Output (Source, Sink) :

400mA, 650mA

Driven Configuration :

Half-Bridge

Gate Type :

IGBT, N-Channel, P-Channel MOSFET

High Side Voltage - Max (Bootstrap) :

600 V

Input Type :

Inverting

Logic Voltage - VIL, VIH :

1.1V, 1.8V

Mounting Type :

Surface Mount

Number of Drivers :

2

Operating Temperature :

-45°C ~ 125°C (TJ)

Part Status :

Active

Rise / Fall Time (Typ) :

70ns, 40ns

Supplier Device Package :

8-SOIC

Voltage - Supply :

17V (Max)