Диаши

IX4R11S3T/R

Channel Type :

Independent

Current - Peak Output (Source, Sink) :

4A, 4A

Driven Configuration :

Half-Bridge

Gate Type :

IGBT, N-Channel MOSFET

High Side Voltage - Max (Bootstrap) :

650 V

Input Type :

Non-Inverting

Logic Voltage - VIL, VIH :

6V, 7V

Mounting Type :

Surface Mount

Number of Drivers :

2

Operating Temperature :

-40°C ~ 150°C (TJ)

Part Status :

Obsolete

Rise / Fall Time (Typ) :

23ns, 22ns

Supplier Device Package :

16-SOIC

Voltage - Supply :

10V ~ 35V