Диаши

IX6R11S6T/R

Channel Type :

Independent

Current - Peak Output (Source, Sink) :

6A, 6A

Driven Configuration :

Half-Bridge

Gate Type :

IGBT, N-Channel MOSFET

High Side Voltage - Max (Bootstrap) :

600 V

Input Type :

Non-Inverting

Logic Voltage - VIL, VIH :

6V, 9.6V

Mounting Type :

Surface Mount

Number of Drivers :

2

Operating Temperature :

-40°C ~ 125°C (TA)

Part Status :

Obsolete

Rise / Fall Time (Typ) :

25ns, 17ns

Supplier Device Package :

18-SOIC

Voltage - Supply :

10V ~ 35V