Диаши

IRS21851STRPBF

Channel Type :

Single

Current - Peak Output (Source, Sink) :

4A, 4A

Driven Configuration :

High-Side

Gate Type :

IGBT, N-Channel MOSFET

High Side Voltage - Max (Bootstrap) :

600 V

Input Type :

Non-Inverting

Logic Voltage - VIL, VIH :

0.8V, 2.5V

Mounting Type :

Surface Mount

Number of Drivers :

1

Operating Temperature :

-55°C ~ 150°C (TJ)

Part Status :

Obsolete

Rise / Fall Time (Typ) :

15ns, 15ns

Supplier Device Package :

8-SOIC

Voltage - Supply :

10V ~ 20V