Диаши

IX2R11M6T/R

Channel Type :

Independent

Current - Peak Output (Source, Sink) :

2A, 2A

Driven Configuration :

Half-Bridge

Gate Type :

IGBT, N-Channel MOSFET

High Side Voltage - Max (Bootstrap) :

500 V

Input Type :

Non-Inverting

Logic Voltage - VIL, VIH :

6V, 9.5V

Mounting Type :

Surface Mount

Number of Drivers :

2

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

16-VDFN Exposed Pad

Part Status :

Obsolete

Rise / Fall Time (Typ) :

8ns, 7ns

Supplier Device Package :

16-MLP (7x6)

Voltage - Supply :

10V ~ 35V